The TS128MSQ64V6U is a 128M x 64bits DDR2-667 SO-DIMM. The TS128MSQ64V6U consists of 8pcs 128M x 8its DDR2 SDRAMs in 68 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The TS128MSQ64V6U is a Dual In-Line Memory Module and is intended for mounting into 200-pin edge connector sockets.¦Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
- RoHS compliant products
- Programmable sequential / interleave burst mode
- Bi-directional differential data-strobe
- Off-Chip Driver (OCD) impedance adjustment
- MRS cycle with address key programs
- On die termination
- Serial presence detect with EEPROM
